Copper film containing tungsten carbide for improving electrical conductivity, thermal stability and hardness properties and a manufacturing method for the copper film

摘要

A copper film containing tungsten carbide is adapted to be formed on a substrate and contains a copper layer having tungsten carbide in atomic ratios of 0.4 to 12.2% in tungsten and of 0.7 to 7.4% in carbon. To achieve the copper film, a manufacturing method has the acts of: adjusting a non-overlapping area between a copper target and a tungsten carbide target; co-sputtering the copper target and the tungsten carbide target to form the copper film containing tungsten carbide; and optionally annealing the copper film containing tungsten carbide to change the microstructure of the copper film. By sputtering the tungsten carbide with copper, the achieved copper film has excellent electrical conductivity, thermal stability at high temperatures and hardness properties.