SEMICONDUCTOR MEMORY HAVING A SHORT EFFECTIVE WORD-LINE CYCLE TIME AND DATA READOUT METHOD FOR SAID SEMI-CONDUCTOR MEMORY

摘要

The invention relates to a data readout method for a semiconductor memory consisting in making available at least one first memory bank and at least one mirror memory bank in order to record a plurality of binary data, data identical to that of the first memory bank being recorded in said mirror memory bank, receiving an order for reading out reading data of the first memory bank, verifying whether the first memory bank is in the open state thereof with the aid of a device for verifying the state of the semiconductor memory, reading out reading data of the memory mirror bank(s), and, if the first memory bank is not open, reading out data thereof, wherein the memory open state is such memory state which makes it possible to read out reading data without preclosing the open word line of the memory bank. A corresponding semiconductor memory is also disclosed.