发明名称 |
RILLEN-POLIERKISSEN ZUM CHEMISCH-MECHANISCHEN PLANARISIEREN |
摘要 |
<p>A pad and process for polishing metal damascene structures on a semiconductor wafer, the pad having low elastic recovery and high energy dissipation coupled with a high pad stiffness, and the pad having macro-texture that includes grooves having a groove depth (D) of about 75 to about 2540 micrometers, a groove width (W) of about 125 to about 1270 micrometers and a groove pitch (P) of about 500 to 3600 micrometers. The groove pattern provides a groove stiffness quotient, GSQ, of about 0.03 to about 1.0; and a groove flow quotient, GFQ, of about 0.03 to about 0.9.</p> |
申请公布号 |
DE60109601(D1) |
申请公布日期 |
2005.04.28 |
申请号 |
DE2001609601 |
申请日期 |
2001.05.24 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
JAMES, B.;VISHWANATHAN, ARUN;COOK, MELBOURNE;BURKE, A.;SHIDNER, DAVID;SO, K.;ROBERTS, V. |
分类号 |
B24B37/04;B24D3/28;B24D13/14;H01L21/304;(IPC1-7):B24B37/04 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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