NITRIDE-BASED LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based light emitting element having a transparent thin film electrode structure, which can exhibit low specific contact resistance and high translucency.

SOLUTION: A nitride-based light emitting element has a structure in which at least an n-type cladding layer 130, an active layer 140, and a p-type cladding layer 150 are sequentially formed on a substrate 110. The nitride-based light emitting element also has an ohmic contact layer 230 composed of a zinc-containing oxide doped with a p-type dopant on the p-type cladding layer 150. This structure provides excellent current-voltage characteristics by improving the properties of ohmic contact with the p-type cladding layer 150 while allowing significant enhancement in the luminous efficiency of the element owing to high translucency of a transparent electrode.

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