| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of increasing a temperature of a wafer up to a wafer processing temperature in a short period of time by an improved temperature controllability because a member to be temperature measured absorbs a change in temperature of a substrate holding means even though the substrate holding means has a temperature spot, and hardly detects the change in temperature sensitively caused by a rotational action of a susceptor. SOLUTION: The substrate processing apparatus comprises a processing chamber, a substrate holding means for holding the substrate in the processing chamber, a heating means for heating the substrate, a temperature detecting means for detecting the temperature of the part to be detected of the substrate or the substrate holding means, a controller for controlling the heating means on the basis of the measured result of the temperature detecting means, and a rotating means for rotating the substrate holding means. The member to be temperature detected is provided between a tip of the temperature detecting means for detecting the temperature in the processing chamber and the substrate holding means, and the temperature controlling means controls the heating means on the basis of the temperature of the member to be temperature measured detected by the temperature detecting means. COPYRIGHT: (C)2005,JPO&NCIPI
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