METHOD OF PRODUCING SILICON NANO-WIRE

摘要

PROBLEM TO BE SOLVED: To produce a silicon nano-wire having the length of several centimeters or above. SOLUTION: In the manufacturing method, the silicon nano-wire is grown on a substrate arranged at a position where the temperature gradient of 10°C/cm is formed between 1,200-900°C in the downstream side of an inert gas stream by vaporizing a sintered compact of silicon powder in the inert gas stream. COPYRIGHT: (C)2005,JPO&NCIPI