| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning a PZT film made mainly of Pb, Zr and Ti that is unnecessarily deposited in a reaction chamber on a fixture and so on, in a film formation device or the like in a semiconductor field. SOLUTION: When the PZT film made mainly of Pb, Zr and Ti are subject to be removed by cleaning, a gas containing chlorine atoms in molecules is used to heat it for reaction at 0-800°C, and then the Pb, Zr and Ti contained in the PZT film are reacted withβ-diketone so as to clean and remove a reaction product at 0-500°C. COPYRIGHT: (C)2005,JPO&NCIPI
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