| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive memory device having a low power consumption in a high density by reducing a current made to flow through a wiring for writing a magnetization information. SOLUTION: A plurality of ferromagnetic tunnel junction elements 30 are arranged on a semiconductor substrate 12 in which a plurality of writing word lines 26 and bit lines 25 constituting a matrix by a crossing in a noncontact manner, free layers 32 which are arranged near each crossing section of the writing word lines 26 and the bit lines 25 and in which the directions of a magnetization are changed, and magnetization fixing layers 35 in which the directions of the magnetization are fixed, are laminated through insulating layers 34. A magnetization information is written to magnetoresistive memory elements at crossing sections selected by a magnetization current made to flow through the writing word lines 26 and the bit lines 25. The magnetization information is read by detecting the resistance change of a current flowing through the magnetoresistive memory devices by a tunnel effect. The ferromagnetic tunnel junction elements 30 are disposed at places displaced from each crossing section of a plurality of the word lines and bit lines. Free-layer extending sections 40 in which only the free layers 32 are extended are disposed among the word lines and the bit lines in the noncontact manner, and the spaces among the extending sections 40 are shortened. COPYRIGHT: (C)2005,JPO&NCIPI
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