发明名称 Photomask with photoresist test patterns and pattern inspection method
摘要 A photomask with photoresist test patterns and pattern inspection method using four test patterns on the photomask to perform the exposure on the first photoresist layer in order to adjust the photomask. The present invention prevents misalignment of the first photomask. The information associated with the misalignment is provided to the process engineer based on the location of the test patterns.
申请公布号 US2005089769(A1) 申请公布日期 2005.04.28
申请号 US20040972457 申请日期 2004.10.26
申请人 FU KUO-KUEI 发明人 FU KUO-KUEI
分类号 G03C5/00;G03F7/00;G03F7/20;G03F9/00;G06K9/00;(IPC1-7):G03F9/00 主分类号 G03C5/00
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