| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which realizes high-speed access to a memory cell by reducing the wiring resistance that connects the storage electrode and the cell transistor. <P>SOLUTION: The memory cell of the semiconductor device comprises a single-crystal semiconductor substrate, a semiconductor element formed in the single-crystal semiconductor substrate, and a capacitor which is connected to the semiconductor-device element, wherein the capacitor comprises a plate electrode formed on the periphery of a trench formed in the single-crystal semiconductor substrate, an insulating film formed on the inner face of the trench, and a storage electrode buried in the lower part of the trench and composed of an electrically conductive material. The storage electrode is connected to the semiconductor element by a wiring layer that is buried in the upper part of the trench and is composed of polycrystalline SiGe having Ge concentration of 20 atomic % or less. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
