SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device enabling an improvement in the degree of integration and the simplification of a manufacturing process.

SOLUTION: The semiconductor integrated circuit device has first n-channel MOSFETs and first p-channel MOSFETs in which gate insulating films are formed in first film thicknesses and n-type impurities are doped to polysilicon layers constituting gate electrodes. The integrated-circuit device further has second n-channel MOSFETs which have the gate insulating films having second film thicknesses thinner than the first film thicknesses and in which n-type impurities are doped to the polysilicon layers constituting the gate electrodes, and second p-channel MOSFETs in which p-type impurities are doped to the polysilicon layers configuring the gate electrodes. The gate electrodes for the first n-channel MOSFETs and the first p-channel MOSFETs are formed integrally, and mutually connected circuits are formed.

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