| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device such as a light emitting device or a diode in which III-V group nitride single crystal film excellent in crystallinity is grown on a substrate using the substrate in which III-V group nitride, lattice constant and coefficient of thermal expansion are adjusted. <P>SOLUTION: The semiconductor device is one in which at least one type of III-V group nitride single crystal films 12, 14, 15 chosen from gallium nitride, aluminum nitride, boron nitride, indium nitride, and mixed crystal composed of these nitrides is directly formed on an aluminum nitride single crystal substrate 11 or formed through a low temperature growth buffer layer 13 of at least one type of III-V group nitride. And it is useful as a light emitting device of short wavelength which can continuously oscillate, a diode operating at high temperature or the like. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
