| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a radiation source, lithographic equipment, and a device manufacturing method. <P>SOLUTION: The radiation source, which comprises pn junction arranged on a substrate, used for lithography can discharge UV or DUV radiation in such a way that avalanche breakdown is generated by reversely biasing the pn junction, and electrons accelerated in n-type region of the pn junction is decelerated. The radiation source like this can offer big design flexibility because the operation voltage is low, and switching speed is high. Further, it can offer high strength by employing, for example, a high output radiation source or a plurality of radiation sources. Efficiency of a device can be improved in such a way that discharge of radiation at desired frequency is increased by doping dopant into the pn junction. And the pn junction is protected by coating it with layer of transparent oxide. Radiation of 300nm or less of wavelength can be obtained by reversely biasing the pn junction with at least potential difference of 4V. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
