RUTHENIUM TARGET FOR SPUTTERING, AND METHOD OF PRODUCING RUTHENIUM TARGET FOR SPUTTERING

摘要

PROBLEM TO BE SOLVED: To provide a ruthenium target for sputtering capable of producing a uniform thin film, and to provide a method of producing the target. SOLUTION: The ruthenium target for sputtering composed of ruthenium or a ruthenium alloy has a columnar crystal structure by an electrodeposition method. The (002) crystal orientation content in the sputtered face measured by an X-ray diffraction method is 70 to 100%. For improving the orientation properties of the (002) plane in this way, the electrodeposited ruthenium or a ruthenium alloy is heated at 1,000 to 1,500°C. COPYRIGHT: (C)2005,JPO&NCIPI