| 发明名称 |
Silicon carbide and process for its production |
| 摘要 |
Silicon carbide having a resistivity of from 10<3> to 10<6> OMEGA .cm and a powder X-ray diffraction peak intensity ratio of at least 0.005 as represented by Id1/Id2 where Id1 is the peak intensity in the vicinity of 2&thetas; being 34 DEG and Id2 is the peak intensity in the vicinity of 2&thetas; being 36 DEG . |
| 申请公布号 |
EP1072570(B1) |
申请公布日期 |
2005.04.27 |
| 申请号 |
EP20000116413 |
申请日期 |
2000.07.28 |
| 申请人 |
ASAHI GLASS COMPANY LTD. |
发明人 |
KAMISUKI, YOUICHI;MIYAKAWA, NAOMICHI;KIKUGAWA, SHINYA;SUZUKI, KATSUYOSHI;ENOMOTO, SATOHIRO |
| 分类号 |
C04B35/565;C01B31/36;C04B35/573;C23C16/01;C23C16/32;C23C16/42;C30B25/02;H01L21/683 |
主分类号 |
C04B35/565 |
| 代理机构 |
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