Photonic crystal light emitting device

摘要

A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer (7) is formed on a tunnel junction. The device includes a first layer of first conductivity type (108), a first layer of second conductivity type (116), and an active region (112) separating the first layer of first conductivity type (108) from the first layer of second conductivity type (116). The tunnel junction includes a second layer of first conductivity type (6) and a second layer of second conductivity type (5) and separates the first layer of first conductivity type (108) from a third layer of first conductivity type (7). A photonic crystal structure is formed in the third layer of first conductivity type (7).