发明名称 |
Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof |
摘要 |
<p>A monolithically integrated circuit comprises a thin film resistor (8) with low resistance and low temperature coefficient; a high frequency lateral power transistor device (9) including gate (17), source (16) and drain (15) regions, and a Faraday shield layer region (22; 22') above the gate region; and at least a first metallization layer (28) there above for electrical connection of the gate (17), source (16) and drain (15) regions through via holes filled with conductive material (29c-d). The thin film resistor (8) and the Faraday shield layer region (22; 22') are made in the same conductive layer, which is arranged below the first metallization layer (28).</p> |
申请公布号 |
EP1526575(A2) |
申请公布日期 |
2005.04.27 |
申请号 |
EP20040445089 |
申请日期 |
2004.09.07 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
NORSTROEM, HANS;JOHANSSON, TED |
分类号 |
H01L27/04;H01L27/06;H01L21/336;H01L21/822;H01L21/8234;H01L21/8249;H01L29/06;H01L29/40;H01L29/417;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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