发明名称 |
ATOMIC LAYER DEPOSITION OF CMOS GATES |
摘要 |
Structures, systems and methods for transistors having gates with variable work functions formed by atomic layer deposition are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The gate includes a ternary metallic conductor formed by atomic layer deposition to provide the ternary metal conductor with a composition engineered to provide a desired thereshold voltage.
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申请公布号 |
KR20050038630(A) |
申请公布日期 |
2005.04.27 |
申请号 |
KR20057003033 |
申请日期 |
2005.02.22 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN, KIE, Y.;FORBES, LEONARD |
分类号 |
H01L21/28;H01L21/285;H01L21/8238;H01L27/092;H01L27/10;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/336;H01L21/822 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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