发明名称 PHOTO-MASK, PHOTO-MASK PAIR, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 A main object of the present invention is to provide a photo-mask improved to ensure dimension with high accuracy. An actual pattern is provided on a substrate. A monitor mark for ensuring dimension of the actual pattern is also provided on the substrate. The monitor mark is provided with a coarse pattern and a high-density array pattern formed to have a density higher than the coarse pattern.
申请公布号 KR100485295(B1) 申请公布日期 2005.04.27
申请号 KR20000059060 申请日期 2000.10.07
申请人 发明人
分类号 H01L21/027;G03F1/08;G03F1/44;G03F7/20;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址