BLOCK CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY INCLUDING MULTI ROW ACTIVATION PART OUTPUTTING OUTPUT SIGNAL OF LOGIC PART OR GENERATING DRIVING SIGNAL ACCORDING TO MULTI ROW ACTIVATION SIGNAL,申请号KR19970078582-传众专利搜索

发明名称	BLOCK CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY INCLUDING MULTI ROW ACTIVATION PART OUTPUTTING OUTPUT SIGNAL OF LOGIC PART OR GENERATING DRIVING SIGNAL ACCORDING TO MULTI ROW ACTIVATION SIGNAL
摘要
申请公布号	KR100487634(B1)	申请公布日期	2005.04.26
申请号	KR19970078582	申请日期	1997.12.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHO, JEONG HO
分类号	G11C11/34;(IPC1-7):G11C11/34	主分类号	G11C11/34
代理机构		代理人
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