Low temperature formation of backside ohmic contacts for vertical devices

摘要

The invention comprises a method for forming a metal-semiconductor ohmic contact ( 18 ) for use in a semiconductor device ( 10 ) having a plurality of epitaxial layers ( 14 a-c) wherein the ohmic contact ( 18 ) is preferably formed after deposition of the epitaxial layers ( 14 a-c). The invention also comprises a semiconductor device comprising a plurality of epitaxial layers and an ohmic contact.