发明名称 Method of fabricating posts over integrated heat sink metallization to enable flip chip packaging of GaAs devices
摘要 The present invention provides for attaching a Gallium Arsenide (GaAs) semiconductor die to a package using bumps formed over a metallic heat sink covering the output transistor area of the semiconductor die. In general, one or more bumps are formed on the metallic heat sink, thereby eliminating stress on the bumps caused by stress risers on the surface of the semiconductor die. In addition, the upper and lower surfaces of the bumps are substantially planar, thereby maximizing contact with the semiconductor die and the package and allowing maximum heat transfer. The planarization is due to the conforming contact surface of the solder. The combination of the bumps and the metallic heat sink provide an efficient way to reduce the thermal and electrical impedance of the die. In one embodiment, the bumps are substantially copper. In another embodiment, the bumps are substantially gold.
申请公布号 US6884661(B1) 申请公布日期 2005.04.26
申请号 US20030701754 申请日期 2003.11.04
申请人 RF MICRO DEVICES, INC. 发明人 MORRIS THOMAS SCOTT;SHAH MILIND;JORGENSON JON
分类号 H01L21/60;H01L23/367;H01L23/485;(IPC1-7):H01L21/48 主分类号 H01L21/60
代理机构 代理人
主权项
地址