发明名称 Process and unit for production of polycrystalline silicon film
摘要 A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.
申请公布号 US6884699(B1) 申请公布日期 2005.04.26
申请号 US20020148562 申请日期 2002.06.03
申请人 SEIKO EPSON CORPORATION 发明人 OGAWA TETSUYA;TOKIOKA HIDETADA;NISHIMAE JUNICHI;OKAMOTO TATSUKI;SATO YUKIO;INOUE MITSUO;MIYASAKA MITSUTOSHI;JIROKU HIROAKI
分类号 C23C14/58;H01L21/20;H01L21/336;(IPC1-7):H01L21/00;H01L21/331;H01L21/26 主分类号 C23C14/58
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