发明名称 |
Transistor-type ferroelectric nonvolatile memory element |
摘要 |
A transistor-type ferroelectric nonvolatile memory element having an MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure that can be highly densely integrated. The MFMIS transistor has a constitution in which the MFM (metal-ferroelectric-metal) structure and the MIS (metal-insulator-semiconductor) structure are stacked up and down on nearly the same area, and the lower MIS structure has means for increasing the effective area of the MIS capacitance. Means for increasing the effective area of the capacitor is a trench in the semiconductor substrate, ruggedness in the MIS structure or a MIN (metal-insulator-metal) structure.
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申请公布号 |
US6885048(B2) |
申请公布日期 |
2005.04.26 |
申请号 |
US20010801990 |
申请日期 |
2001.03.08 |
申请人 |
NIPPON PRECISION CIRCUITS INC. |
发明人 |
TARUI YASUO;SAKAMAKI KAZUO |
分类号 |
H01L21/8247;H01L21/02;H01L21/28;H01L27/10;H01L27/105;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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