发明名称 Low spurious charge pump
摘要 Phase locked loop charge pump comprising a drain node (A, B) and at least a cascode transistor (M 4 , M 6 ) for limiting the variation of the voltage of said drain node, characterized in that an intermediate switch transistor (M 3 , M 5 ) is placed between the drain node (A, B) and the cascode transistor (M 4 , M 6 ).
申请公布号 US6885251(B2) 申请公布日期 2005.04.26
申请号 US20020058804 申请日期 2002.01.30
申请人 ALCATEL 发明人 DELMOT THIERRY;BONJEAN FRANS THERESIA JOZEF
分类号 H03L7/089;(IPC1-7):H03L7/00 主分类号 H03L7/089
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