发明名称 |
Method for forming capacitor of semiconductor device |
摘要 |
A method for forming of a capacitor wherein an etching barrier layer comprising a stacked structure of a nitride film and a tantalum oxide film is disclosed. The method comprises the steps of: forming an etching barrier layer on an interlayer insulating film having a storage electrode contact plug therein, the etching barrier layer comprising a stacked structure of a nitride film and a tantalum oxide film; forming an oxide film on the etching barrier layer; selectively etching the oxide film and the etching barrier layer to form an opening exposing the storage electrode contact plug; depositing a storage electrode layer on the bottom and the inner walls of the opening; and removing the oxide film, whereby forming a storage electrode.
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申请公布号 |
US6884678(B2) |
申请公布日期 |
2005.04.26 |
申请号 |
US20030608429 |
申请日期 |
2003.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK DONG SU;LEE TAE HYEOK;PARK CHEOL HWAN |
分类号 |
H01L21/8242;H01L21/02;H01L21/314;H01L21/318;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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