发明名称 |
Deep trench isolation of embedded DRAM for improved latch-up immunity |
摘要 |
A protective structure for blocking the propagation of defects generated in a semiconductor device is disclosed. In an exemplary embodiment, the structure includes a deep trench isolation formed between a memory storage region of the semiconductor device and a logic circuit region of the semiconductor device, the deep trench isolation being filled with an insulative material. The deep trench isolation thereby prevents the propagation of crystal defects generated in the logic circuit region from propagating into the memory storage region.
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申请公布号 |
US6885080(B2) |
申请公布日期 |
2005.04.26 |
申请号 |
US20020082648 |
申请日期 |
2002.02.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN TZE-CHIANG;HAN LIANG-KAI |
分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/08;H01L27/092;H01L27/108;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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