| 摘要 |
An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting the diffusion area. The electronic device further includes a conductive contact covering and contacting both the polysilicon layer and the diffusion area. Therefore, the semiconductor device disclosed in this invention includes poly-to-diffusion connection for a semiconductor device that has a diffusion are and a polysilicon area. The semiconductor device further includes a contact that covers both the diffusion area and the polysilicon area with a contact filling material forming the connection between these two areas.
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