| 发明名称 |
Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber |
| 摘要 |
A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr. |
| 申请公布号 |
US6884464(B2) |
申请公布日期 |
2005.04.26 |
| 申请号 |
US20020288358 |
申请日期 |
2002.11.04 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LUO LEE;IYER R. SURYANARAYANAN;SUBRAMONY JANARDHANAN ANAND;SANCHEZ ERROL ANTONIO C.;JIN XIAOLIANG;CHEN AIHUA;YAN CHANG-LIAN;TOKAI NOBUO;MAEDA YUJI;THAKUR RANDHIR P. SINGH |
| 分类号 |
C23C16/24;C23C16/30;C23C16/34;C23C16/40;C23C16/44;C23C16/455;H01L21/205;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):C23C16/22 |
主分类号 |
C23C16/24 |
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