发明名称 |
PIXEL SENSOR WITH A LOW DARK CURRENT PHOTODIODE |
摘要 |
A method and apparatus for reducing thermally generated dark current in a CMOS imaging device is disclosed. A photodiode within the imaging device is kept zero-biased, so that the voltage is equal at both ends of the photodiode. This zero-biasing is accomplished using several different techniques, including, alternatively: a transistor operating at its sub-threshold level; a leaky diode; a short-channel MOSFET; or ramping charge injection.
|
申请公布号 |
KR20050038026(A) |
申请公布日期 |
2005.04.25 |
申请号 |
KR20057002998 |
申请日期 |
2005.02.22 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
NAKAMURA, JUNICHI;TAKAYANAGI, ISAO |
分类号 |
H04N5/335;H01L27/146;H04N3/15;H04N5/217;(IPC1-7):H01L27/146 |
主分类号 |
H04N5/335 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|