发明名称 PIXEL SENSOR WITH A LOW DARK CURRENT PHOTODIODE
摘要 A method and apparatus for reducing thermally generated dark current in a CMOS imaging device is disclosed. A photodiode within the imaging device is kept zero-biased, so that the voltage is equal at both ends of the photodiode. This zero-biasing is accomplished using several different techniques, including, alternatively: a transistor operating at its sub-threshold level; a leaky diode; a short-channel MOSFET; or ramping charge injection.
申请公布号 KR20050038026(A) 申请公布日期 2005.04.25
申请号 KR20057002998 申请日期 2005.02.22
申请人 MICRON TECHNOLOGY, INC. 发明人 NAKAMURA, JUNICHI;TAKAYANAGI, ISAO
分类号 H04N5/335;H01L27/146;H04N3/15;H04N5/217;(IPC1-7):H01L27/146 主分类号 H04N5/335
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