| 摘要 |
In a process for the production of high parity silicon semi-conductor material by single crystal growing, up to 1 atom per cent of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and/or W is added to the silicon either in the form of gaseous compounds (e.g. chlorides) during the production of the silicon from a gaseous compound thereof, or in elemental form by adding to the melt.
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