| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition that exhibits satisfactory transmittance when an exposure light source of ArF excimer laser light or F<SB>2</SB>excimer laser light is used, and that is improved in resolution, sensitivity, residue on development (scum), dissolution contrast, surface roughness, development defects, profile and roundness of a contact hole pattern, and to provide a pattern formation method using the same. <P>SOLUTION: The positive resist composition comprises (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution and includes a repeating unit represented by formula (I) and (B) a compound that generates an acid under the action of an actinic ray or radiation. The pattern formation method uses the same. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
