| 摘要 |
PROBLEM TO BE SOLVED: To reduce a cross-sectional area of a fuse for a semiconductor device and to reduce a cross-sectional area or a line width of wiring to be connected with the fuse as a result. SOLUTION: The manufacturing method of a fuse made of a conductive material 32 that vertically penetrates the insulator layer 18 of a semiconductor device forms a hole 24 penetrating vertically the insulator layer 18, and a side wall 26 on the wall surface of the hole 24, and fills in the hole 24 wherein the side wall 26 is formed with the conductive material 32. The side wall 26 is desirably made thinnest on the side of a substrate 12 and gradually larger in thickness along with the distance from the substrate 12. The side wall 26 is desirably formed of a first layer 28 that is formed on the inner surface of the hole 24 and is made of silicon nitride and a second layer 30 that is formed inside the first layer 28 and is made of silicon oxide. COPYRIGHT: (C)2005,JPO&NCIPI |
