| 摘要 |
PROBLEM TO BE SOLVED: To prevent corrosion caused by a residual etching material after etching a metal film used in a semiconductor device. SOLUTION: An etching means 10, wherein the metal film formed on a wafer employing a resist mask is etched by the etching material which corrodes the metal film, an ashing means 20 for removing the resist mask after the etching treatment, a cleaning means 30 for cleaning the wafer after removing the resist mask, and a corrosion preventing film forming means 40, wherein a corrosion-preventing film for preventing the corrosion caused by the etching material for the metal film after cleaning the wafer is formed by ozone-added water, are comprised in a semiconductor manufacturing device 100. The treatment time of a next means is set within the treating time of a means, immediately prior to the next means. COPYRIGHT: (C)2005,JPO&NCIPI
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