PHOTODIODE

摘要

PROBLEM TO BE SOLVED: To provide a photodiode which may be introduced into a semiconductor integrated circuit and has improved in the response rate without excessive lowering of the photoelectric conversion efficiency. SOLUTION: On the surface of the P+type semiconductor substrate 11, the P-type epitaxial growth layer 12 is formed. On an epitaxial growth layer 12, the N+type region 13 is provided. Moreover, in the circumference of the N+type region 13, the P+type region 14 extending to a semiconductor substrate 11 is provided in separation from the N+type region 13 as long as the predetermined distance L1. The predetermined distance L1 is set almost equal to the separation distance L2 between the bottom of the N+type region 13 and the semiconductor substrate 11. A cathode electrode 15 is provided on the N+type region 13 and an anode electrode 16 is also provided at the rear surface of the semiconductor substrate 11. COPYRIGHT: (C)2005,JPO&NCIPI