| 发明名称 |
METHOD FOR THE DEPOSITION OF SILICON NITRIDE FILMS |
| 摘要 |
A method is provided for obtaining stable and elevated deposition rates in a reaction chamber, following the cleaning of the chamber. The method involves cleaning of the chamber, pre-coating the interior surfaces of the reaction chamber with an inorganic composition, and then, using the pre-coated chamber to deposit an organic layer onto a workpiece.
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| 申请公布号 |
US2005085098(A1) |
申请公布日期 |
2005.04.21 |
| 申请号 |
US20030690215 |
申请日期 |
2003.10.20 |
| 申请人 |
TIMMERMANS ERIC A.;TEEPEN MAARTEN J.;MUCCIATO RAFFAELE;WILHELM RUDI |
发明人 |
TIMMERMANS ERIC A.;TEEPEN MAARTEN J.;MUCCIATO RAFFAELE;WILHELM RUDI |
| 分类号 |
C23C16/34;C23C16/44;H01L21/314;H01L21/318;(IPC1-7):H01L21/469 |
主分类号 |
C23C16/34 |
| 代理机构 |
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