发明名称 |
Light-emitting semiconductor device having enhanced brightness |
摘要 |
This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.
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申请公布号 |
US2005082555(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20040791765 |
申请日期 |
2004.03.04 |
申请人 |
UNITED EPITAXY COMPANY, LTD. |
发明人 |
CHIEN WEI-EN;CHANG CHIH-SUNG;TZER-PERNG CHEN |
分类号 |
H01L29/205;H01L33/38;H01L33/42;(IPC1-7):H01L33/00 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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