| 摘要 |
The present invention includes a method for extracting semiconductor device model parameters for a device model such as the BSIM4 model. The device model parameters for the device model includes a plurality of base parameters, DC model parameters, temperature dependent related parameters, and AC parameters. The method also includes steps for extracting various DC model parameters. The present invention also includes a method for extracting device model parameters including the steps of extracting a portion of the DC model parameters based on the terminal current data, modifying the terminal current data based on the extracted portion of the DC model parameters, and extracting a second portion of the DC model parameters based on the modified terminal current data.
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