COMPOSITION FOR FORMING ETCHING STOPPER LAYER

摘要

Disclosed is a composition for forming an etching stopper layer which has dry etching selectivity ratio and low dielectric constant at the same time. Also disclosed is a method for manufacturing a semiconductor device wherein such a composition is used. Specifically, a composition for forming an etching stopper layer including a silicon-containing polymer is characterized in that the silicon-containing polymer included in the composition has a disilylbenzene structure. Also disclosed is a method for manufacturing a semiconductor device wherein an etching stopper layer is formed using such a composition.