| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the non-alignment of a junction or the like, in a phase change diode memory. <P>SOLUTION: The superdense data memory (200) uses the phase change diode memory cell and has a plurality of ejectors (102, 104) for irradiating the beam (105) of an effective energy, a layer (202) for forming a plurality of data memory cells and diode structures (202, 204) laminated to detect the memory of the memory cell or a data status; the device can vary the status with the beam (105) from the ejectors (102, 104) and includes a phase change data memory layer (202) comprising a material containing copper, indium and selenium. In addition, a method for forming the diode structure of a phase change data memory array is also provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
