| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for growing a ferroelectric thin film of high quality consisting of crystal grains with small and uniform sizes, with a MOCVD technique in a short period of time (with a high growth rate). <P>SOLUTION: This film-forming method includes a step of interrupting growth of the ferroelectric thin film once for an arbitrary period of time, by stopping the feed of an organometallic raw material before the thickness in an early growing stage of the ferroelectric thin film by the MOCVD technique reaches 10 nm; or a step of repeating film growth and the growth interruption of five seconds or longer, by interrupting the feed of the organometallic raw material on the way at least between the time of starting the growth and the time when the film thickness reaches 10 nm, and refeeding the raw material. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
