| 摘要 |
PROBLEM TO BE SOLVED: To provide a static discharge protective element wherein the operating voltage is minutely set according to the breakdown voltage and the wiring resistance of a circuit in a semiconductor integrated circuit. SOLUTION: The static discharge protective element 1a is connected to the input node Ni of an inner circuit 3 to be protected, and comprises a p-type first semiconductor region (well region) 5, a surge current carrying electrode (drain electrode) 11 forming a Schottky junction by contacting with a part of the well region 5, and connected to the input node Ni; an n<SB>+</SB>-type second semiconductor region (drain region) 15 in contact with another part of the drain electrode 11 arranged in the well region 5; and an n<SB>+</SB>-type third semiconductor region (source region) 8 arranged in the well region 5 and separated from the drain region 15; and a control electrode (gate electrode) 17 arranged on the well region 5 in between the drain region 15 and the source region 8, but insulated from the well region 5 and connected to the ground potential. COPYRIGHT: (C)2005,JPO&NCIPI
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