| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be suppressed in variation of threshold voltage by separating the active region of a field effect transistor and the ion-implanted region of a body contact without forming a parasitic MOS. SOLUTION: In the semiconductor device having the field effect transistor having an SOI structure, the ion-implanted region 11 of the body contact 6 is separated from the active region 2 of the field effect transistor to suppress the diffusion of implanted ions to the active region 2 side. COPYRIGHT: (C)2005,JPO&NCIPI
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