| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can be enhanced in output without increasing a series resistance, and to provide its manufacturing method. SOLUTION: On an n-type GaAs substrate 1, an n-type AlGaInP clad layer 2, active layer 3, p-type AlGaInP clad layer 4, GaInP etching stopper layer 5, p-type AlGaInP clad layer 6, p-type GaInP layer 7, and p-type GaAs cap layer 8 are formed, in this order. The p-type AlGaInP clad layer 6 consists of two layers, having different Al composition ratio, that is, the p-type AlGaInP clad layer 6 consists of a p-type AlGaInP clad layer 6a and a p-type AlGaInP clad layer 6b which are formed, in this order on top of the GaInP etching stopper layer 5. Since the Al composition ratio of the p-type AlGaInP clad layer 6a is larger by 0.1-0.2 than that of the p-type AlGaInP clad layer 6b, the p-type AlGaInP clad layer 6a has a higher etching rate, with respect to a hydrochloric acid-based etchant than the p-type AlGaInP clad layer 6b. COPYRIGHT: (C)2005,JPO&NCIPI
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