发明名称 SINGLE CRYSTAL GROWING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a single crystal growing apparatus which realizes control of temperature distribution in a crystal growth part to thereby grow a single crystal having good crystallinity by a floating zone melting method. SOLUTION: High frequency induction heating coils used in a single crystal manufacturing apparatus by the floating zone melting method are composed of a plurality of coils 1 arranged in a melting zone part 3 and a plurality of coils 5 arranged in a growing single crystal part 2. These coils 1, 5 are constituted so as to generate heating parts by high frequency magnetic fields in two parts of the melting zone part and the growing single crystal part at an axial interval of 1.5-2.5 times of the melting zone width. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005104751(A) 申请公布日期 2005.04.21
申请号 JP20030337503 申请日期 2003.09.29
申请人 KYOCERA CORP 发明人 KAWAGUCHI YOSHIYUKI
分类号 C30B13/20;C30B29/10;(IPC1-7):C30B13/20 主分类号 C30B13/20
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