发明名称 |
Semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit device according to the present invention includes an N-type embedded diffusion region between a substrate and an epitaxial layer in first and second island regions serving as small signal section. The N-type embedded diffusion region connects to N-type diffusion regions having supply potential. The substrate and the epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.
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申请公布号 |
US2005082632(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20040950611 |
申请日期 |
2004.09.27 |
申请人 |
KANDA RYO;OKAWA SHIGEAKI;YOSHITAKA KAZUHIRO |
发明人 |
KANDA RYO;OKAWA SHIGEAKI;YOSHITAKA KAZUHIRO |
分类号 |
H01L21/74;H01L21/761;H01L21/8222;H01L21/8224;H01L21/8226;H01L21/8228;H01L21/8248;H01L21/8249;H01L27/06;H01L27/082;H01L29/732;(IPC1-7):H01L29/423 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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