| 摘要 |
A multi-finger transistor is described, including multiple parallel transistors. Each transistor includes a gate dielectric layer, a gate, a source/drain region, and a drift region in the peripheral substrate of the source/drain region separating the source/drain region and the channel region under the gate. The width of the drift region extending from the side boundary of the source/drain region increases stepwise from the edge sections of the multi-finger transistor toward the central section of the same.
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