发明名称 |
Neutron detection device and method of manufacture |
摘要 |
A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.
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申请公布号 |
US2005082489(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20030693847 |
申请日期 |
2003.10.20 |
申请人 |
AUGUST ROBERT A.;HUGHES HAROLD L.;MCMARR PATRICK J.;WHITLOCK ROBERT R. |
发明人 |
AUGUST ROBERT A.;HUGHES HAROLD L.;MCMARR PATRICK J.;WHITLOCK ROBERT R. |
分类号 |
G01T3/08;H01L31/115;(IPC1-7):G01T3/08 |
主分类号 |
G01T3/08 |
代理机构 |
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主权项 |
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地址 |
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