| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for depositing a conductive niobium monoxide film as a MOSFET gate. <P>SOLUTION: A simple metal target or a composite niobium monoxide target is provided in a sputtering chamber. A substrate, having a gate dielectric (for example, silicon dioxide or a high-k gate dielectric), is provided in the sputtering chamber. The sputtering power and oxygen partial pressure in sputtering does not require excessive amount of simple substance niobium, an NbO<SB>2</SB>insulator, or an Nb<SB>2</SB>O<SB>5</SB>insulator; and is set so that a film containing niobium monoxide is deposited. The deposition method may be incorporated into a standard CMOS manufacturing process or into a substituting gate COMS process. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
