| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which improves an optical output and optical efficiency without deteriorating optical characteristics of a quantum well layer by forming an n-type impurity diffusion blocking layer on an interface of a quantum barrier layer contacted with the quantum well layer. <P>SOLUTION: The nitride semiconductor element comprises a first nitride semiconductor layer doped with an n-type impurity, an active layer composed of a plurality of quantum well layers and a plurality of quantum barrier layers laminated on the first nitride semiconductor layer, and a nitride semiconductor layer doped with a p-type impurity on the active layer. At least one of the quantum barrier layers is doped with an n-type impurity and has a diffusion blocking layer on the interface contacted with the quantum well layer. The diffusion blocking layer has a lower n-type impurity concentration than that in other doped inner regions of the quantum barrier layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
